MPS6523(1997) 데이터 시트보기 (PDF) - Motorola => Freescale
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MPS6523 Datasheet PDF : 12 Pages
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PNP
MPS6523
NPN MPS6521 PNP MPS6523
TYPICAL DYNAMIC CHARACTERISTICS
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
FIGURE 19
DUTY CYCLE, D = t1/t2
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1 (SEE AN–569)
t2
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 37. Thermal Response
400
200
100
60
40
20
10
6.0
4.0
2.0
1.0 ms
10 µs
TC = 25°C
TA = 25°C
dc
100 µs
1.0 s
dc
TJ = 150°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
4.0 6.0 8.0 10
20
40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 38. Active–Region Safe Operating Area
104
VCC = 30 V
103
102
ICEO
101
ICBO
AND
100
ICEX @ VBE(off) = 3.0 V
10–1
10–2
–4 –2
00
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 39. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 17 by the
steady state value RθJA.
Example:
The MPS6523 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
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