MPS6523(1997) 데이터 시트보기 (PDF) - Motorola => Freescale

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MPS6523
(Rev.:1997)

Amplifier Transistors

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MPS6521/D

Amplifier Transistors

COLLECTOR 3

2

BASE

1 EMITTER

COLLECTOR 3

2

BASE

1 EMITTER

NPN

MPS6521*

PNP

MPS6523

Voltage and current are negative

for PNP transistors

*Motorola Preferred Device

MAXIMUM RATINGS

Rating

Symbol

NPN

PNP

Unit

Collector – Emitter Voltage

VCEO

MPS6521

25

MPS6523

—

Vdc

—

25

Collector – Base Voltage

VCBO

Vdc

1

MPS6521

40

—

2

3

MPS6523

—

25

Emitter – Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

PD

Derate above 25°C

625

mW

5.0

mW/°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Total Device Dissipation @ TC = 25°C

PD

Derate above 25°C

1.5

Watts

12

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

(Printed Circuit Board Mounting)

RqJA

200

°C/W

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

RqJC

83.3

Symbol

Min

°C/W

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 0.5 mAdc, IB = 0)

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0)

MPS6521

MPS6523

V(BR)CEO

25

V(BR)EBO

4.0

ICBO

—

—

—

Vdc

—

Vdc

mAdc

0.05

0.05

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MPS6520/D)

©MMotootorroollaa,

Small–Signal

Inc. 1997

Transistors,

FETs

and

Diodes

Device

Data

1

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