MTD1302T4 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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MTD1302T4 Datasheet PDF : 8 Pages
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MTD1302T4
N-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.007 at VGS = 10 V
0.009 at VGS = 4.5 V
ID (A)a, e
50
40
Qg (Typ)
25 nC
D
TO-252
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
• DC/DC
G
GDS
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
IAS
L = 0.1 mH
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
50
40
21.8b, c
18b, c
200
39
94.8
50a, e
3.13b, c
100a
75
3.25b, c
2.33b, c
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
t 10 sec
RthJA
32
Steady State
RthJC
0.5
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Max.
40
0.6
Unit
V
A
mJ
A
W
°C
Unit
°C/W
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