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MTDF1N03HDR2 Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistor
Micro8™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8™ devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
G
• Miniature Micro8 Surface Mount Package — Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
Order this document
by MTDF1N03HD/D
MTDF1N03HD
Motorola Preferred Device
™
D
DUAL TMOS
POWER MOSFET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.120 OHM
CASE 846A–02, Style 2
Micro8
S
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
DEVICE MARKING
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
BB
MTDF1N03HDR2
13″
12 mm embossed tape
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 4
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1
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