MTDF1N03HDR2 데이터 시트보기 (PDF) - Motorola => Freescale

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MTDF1N03HDR2

TMOS Dual N-Channel Field Effect Transistor

Motorola => Freescale 

MTDF1N03HD

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Negative sign for P–Channel devices omitted for clarity

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

Gate–to–Source Voltage — Continuous

1 inch SQ.

FR–4 or G–10 PCB

Figure 1 below

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

Minimum

FR–4 or G–10 PCB

Figure 2 below

1 die operating

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

Minimum

FR–4 or G–10 PCB

Figure 2 below

2 die operating

Steady State

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (1)

Operating and Storage Temperature Range

W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 2.4 Apk, L = 69 mH, RG = 25 )

(1) Repetitive rating; pulse width limited by maximum junction temperature.

Symbol

VDSS

VDGR

VGS

RTHJA

PD

ID

ID

IDM

RTHJA

PD

ID

ID

IDM

RTHJA

PD

ID

ID

IDM

TJ, Tstg

EAS

Max

30

30

± 20

100

1.25

10

2.8

2.2

23

200

0.63

5.0

2.0

1.6

16

300

0.42

3.33

1.6

1.3

13

– 55 to 150

200

Unit

V

V

V

°C/W

Watts

mW/°C

A

A

A

°C/W

Watts

mW/°C

A

A

A

°C/W

Watts

mW/°C

A

A

A

°C

mJ

Figure 1. 1.0 Inch Square FR–4 or G–10 PCB

Figure 2. Minimum FR–4 or G–10 PCB

2

Motorola TMOS Power MOSFET Transistor Device Data

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