MTDF1N03HDR2 데이터 시트보기 (PDF) - Motorola => Freescale

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MTDF1N03HDR2

TMOS Dual N-Channel Field Effect Transistor

Motorola => Freescale 

MTDF1N03HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0)

(1) (3)

V(BR)DSS

Vdc

30

—

—

—

29

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk ≥ 2.0)

(3)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

1.0

—

—

25

—

—

100

nAdc

VGS(th)

1.0

1.6

—

3.7

Vdc

—

—

mV/°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.7 Adc)

(VGS = 4.5 Vdc, ID = 0.85 Adc)

(Cpk ≥ 2.0)

(3)

RDS(on)

—

mΩ

96

120

—

135

160

Forward Transconductance (VDS = 10 Vdc, ID = 0.85 Adc)

(1)

gFS

1.0

2.0

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

—

140

—

pF

—

70

—

—

30

—

Turn–On Delay Time

td(on)

—

7.5

—

ns

Rise Time

Turn–Off Delay Time

(VDS = 15 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc, RG = 6 Ω) (1)

tr

td(off)

—

10

—

—

22

—

Fall Time

tf

—

18

—

Turn–On Delay Time

td(on)

—

7.0

—

ns

Rise Time

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 0.85 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

tr

td(off)

—

8.2

—

—

22

—

Fall Time

tf

—

14.5

—

Gate Charge

QT

—

5.0

7.0

nC

(VDS = 24 Vdc, ID = 1.7 Adc,

VGS = 10 Vdc)

Q1

—

0.5

—

Q2

—

1.65

—

Q3

—

1.3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.7 Adc, VGS = 0 Vdc) (1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

Vdc

—

0.84

1.0

—

0.7

—

Reverse Recovery Time

(IS = 1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

Reverse Recovery Storage Charge

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

trr

ta

tb

QRR

—

20

—

ns

—

12

—

—

8.0

—

—

0.012

—

µC

Motorola TMOS Power MOSFET Transistor Device Data

3

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