MTDF1C02HD 데이터 시트보기 (PDF) - Motorola => Freescale

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MTDF1C02HD

COMPLEMENTARY DUAL TMOS POWER FET 20 VOLTS RDS(on) = 0.120 OHM 1.7 AMPERES(N–CHANNEL) RDS(on) = 0.175 OHM 1.6 AMPERES(P–CHANNEL)

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (1)

Characteristic

Symbol Polarity Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (Cpk ≥ 2.0)

(VGS = 0 Vdc, ID = 250 µAdc)

Breakdown Temperature Coefficient

(Positive)

(1)(3) V(BR)DSS

(N)

20

(P)

20

(N)

—

(P)

—

Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 16 Vdc)

(VGS = 0 Vdc, VDS = 20 Vdc)

IDSS

(N)

—

(P)

—

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

IGSS

—

—

Gate Threshold Voltage

(Cpk ≥ 2.0)

(VDS = VGS, ID = 250 µAdc)

(1)(3)

VGS(th)

(N)

0.7

(P)

0.7

Threshold Temperature Coefficient

(Negative)

(N)

—

(P)

—

Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.7 Adc)

RDS(on)

(N)

—

(VGS = 4.5 Vdc, ID = 1.6 Adc)

(P)

—

Drain–to–Source On–Resistance (Cpk ≥ 2.0)

(1)(3)

RDS(on)

(VGS = 2.7 Vdc, ID = 0.85 Adc)

(N)

—

(VGS = 2.7 Vdc, ID = 0.8 Adc)

(P)

—

Forward Transconductance (1) (VDS = 10 Adc, ID = 0.85 Adc)

gFS

(VDS = 10 Adc, ID = 0.6 Adc)

(N)

2.0

(P)

1.3

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(N)

—

(P)

—

Output Capacitance

(VDS = 15 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

—

(P)

—

Transfer Capacitance

Crss

(N)

—

(P)

—

SWITCHING CHARACTERISTICS (3)

Turn–On Delay Time

Rise Time

(VDD = 10 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω) (1)

td(on)

tr

(N)

—

(P)

—

(N)

—

(P)

—

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 1.2 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω) (1)

td(off)

tf

(N)

—

(P)

—

(N)

—

(P)

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VDS = 10 Vdc, ID = 0.85 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω) (1)

(VDS = 10 Vdc, ID = 0.6 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω) (1)

(VDS = 16 Vdc, ID = 1.7 Adc,

VGS = 4.5 Vdc) (1)

(VDS = 16 Vdc, ID = 1.2 Adc,

VGS = 4.5 Vdc) (1)

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

(N)

—

(P)

—

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

MTDF1C02HD

Typ

Max

Unit

—

—

Vdc

—

—

5.0

—

14

—

—

1.0

µAdc

—

1.0

—

100

nAdc

0.90

0.95

2.5

2.2

0.100

0.146

0.133

0.220

—

—

1.1

1.4

—

—

0.120

0.175

0.16

0.28

—

—

Vdc

Ohm

Ohm

mhos

145

—

pF

225

—

90

—

150

—

38

—

60

—

8.0

—

ns

15

—

27

—

27

—

23

—

60

—

34

—

72

—

16

—

20

—

79

—

94

—

24

—

49

—

31

—

76

—

3.9

5.5

nC

5.3

7.5

0.4

—

0.7

—

1.7

—

2.6

—

1.5

—

1.9

—

(continued)

Motorola TMOS Power MOSFET Transistor Device Data

3

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