MTDF1C02HD 데이터 시트보기 (PDF) - Motorola => Freescale
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MTDF1C02HD Datasheet PDF : 14 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
MTDF1C02HD
P–Channel
0.6
0.4
ID = 1.7 A
0.5
TJ = 25°C
ID = 1.6 A
0.3
TJ = 25°C
0.4
0.3
0.2
0.2
0.1
0.1
0
0
2.0
4.0
6.0
8.0
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0
0
2.0
4.0
6.0
8.0
10
VGS, GATE–TO–SOURCE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0.15
2.7 V
0.13
TJ = 25°C
0.11
VGS = 4.5 V
0.09
0.07
0.05
0
1.0
2.0
3.0
4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
TJ = 25°C
0.5
0.4
2.7 V
0.3
0.2
VGS = 4.5 V
0.1
0
0
1.0
2.0
3.0
4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 0.85 A
1.6
1.2
0.8
0.4
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
2.0
VGS = 4.5 V
ID = 0.8 A
1.5
1.0
0.5
0
–50 –25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
Motorola TMOS Power MOSFET Transistor Device Data
5
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