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MRF555 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF555
Motorola
Motorola => Freescale Motorola
MRF555 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF555/D
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF555
1.5 W, 470 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16
Vdc
Collector–Base Voltage
VCBO
36
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
400
mAdc
Operating Junction Temperature
TJ
150
°C
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
Storage Temperature Range
PD
3.0
Watts
40
mW/°C
Tstg
– 55 to +150
°C
CASE 317D–02, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
50
90
200
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
3.5
5.0
pF
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF555
1

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