MMDF3N02HD 데이터 시트보기 (PDF) - Motorola => Freescale

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MMDF3N02HD

TMOS Dual N-Channel Field Effect Transistors

Motorola => Freescale 

MMDF3N02HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

1.0

—

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

—

—

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

2.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 3.0 Adc, VGS = 0 Vdc)

VSD

—

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

—

Reverse Recovery Time

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

29

—

mV/°C

µAdc

—

1.0

—

10

—

100

nAdc

1.5

4.0

0.058

0.074

3.88

2.0

—

0.090

0.100

—

Vdc

mV/°C

Ohms

Mhos

455

630

pF

184

250

45

90

11

22

ns

58

116

17

35

20

40

7.0

21

32

64

27

54

21

42

12.5

18

nC

1.3

—

2.8

—

2.4

—

0.79

1.3

Vdc

0.72

—

23

—

ns

18

—

5.0

—

0.025

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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