MMDF2C02E 데이터 시트보기 (PDF) - ON Semiconductor
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MMDF2C02E Datasheet PDF : 10 Pages
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MMDF2C02E
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
P−Channel
0.6
0.6
ID = 3.5 A
ID = 1 A
0.5
TJ = 25°C
0.5
TJ = 25°C
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
2
0.15
0.1
3
4
5
6
7
8
9 10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
VGS = 4.5
TJ = 25°C
10 V
0.05
0
0
1
2
3
4
5
6
7
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.6
TJ = 25°C
0.5
0.4
VGS = 4.5
0.3
0.2
10 V
0.1
0
0.5
1
1.5
2
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 3.5 A
1.5
2.0
VGS = 10 V
ID = 2 A
1.5
1.0
1.0
0.5
0.5
0
−50 −25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation
with Temperature
0
−50 −25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
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