MMG3004NT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMG3004NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

50 OHM TYPICAL CHARACTERISTICS: 1900--2200 MHz

18

--5

17

TC = 25C

16

85C

--40C

15

14

13

VDC = 5 Vdc

12

1900

1960

2020

2080

2140

2200

f, FREQUENCY (MHz)

Figure 17. Small--Signal Gain (S21) versus

Frequency

--6

--7

--8

TC = 85C

--40C

--9

25C

VDC = 5 Vdc

--10

1900

1960

2020

2080

2140

2200

f, FREQUENCY (MHz)

Figure 18. Input Return Loss (S11) versus

Frequency

--5

--7

--9

--11

TC = --40C

--13

VDC = 5 Vdc

--15

85C

25C

1900

1960

2020

2080

2140

2200

f, FREQUENCY (MHz)

Figure 19. Output Return Loss (S22) versus

Frequency

47

45

TC = 25C

43

--40C

41

85C

39

VDC = 5 Vdc

1 MHz Tone Spacing

37

1900

1960

2020

2080

2140

2200

f, FREQUENCY (MHz)

Figure 21. Third Order Output Intercept

Point versus Frequency

29

28

TC = --40C

27

25C

85C

26

VDC = 5 Vdc

25

1900

1960

2020

2080

2140

2200

f, FREQUENCY (MHz)

Figure 20. P1dB versus Frequency

10

8

6

4

TC = 85C

2

VDC = 5 Vdc

--40C

25C

0

1900

1960

2020

2080

2140

2200

f, FREQUENCY (MHz)

Figure 22. Noise Figure versus Frequency

MMG3004NT1

10

RF Device Data

Freescale Semiconductor, Inc.

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