BPV21FL 데이터 시트보기 (PDF) - Vishay Semiconductors
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BPV21FL Datasheet PDF : 6 Pages
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Silicon PIN Photodiode
BPV21F(L)
Vishay Semiconductors
Description
BPV21F(L) is a high speed and high sensitive PIN
photodiode in a plasic package with a cylindrical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (λ p = 950 nm).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
Features
• Large radiant sensitive area (A = 5.7 mm2)
• Wide viewing angle ϕ = ± 65°
• Fast response times
e4
• Low junction capacitance
• TO-92 plastic package with IR filter
• Filter designed for 950 nm transmission
• Option "L" long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Power Dissipation
Tamb ≤ 25 °C
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
t≤5s
Thermal Resistance Junction/
Ambient
948387
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
Symbol
Value
Unit
VR
60
V
PV
215
mW
Tj
100
°C
Tamb
- 55 to + 100
°C
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
IF = 50 mA
VF
1
1.3
V
Breakdown Voltage
IR = 100 μA, E = 0
V(BR)
60
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2
30
nA
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
48
pF
Serial Resistance
VR = 12 V, f = 1 MHz
RS
900
Ω
Document Number 81507
Rev. 1.6, 13-Nov-06
www.vishay.com
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