BPW82 데이터 시트보기 (PDF) - Vishay Semiconductors
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BPW82 Datasheet PDF : 5 Pages
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BPW82
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Angle of half sensitivity
IR = 100 µA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 870 nm
Ee = 1 mW/cm2, λ = 870 nm
Ee = 1 mW/cm2, λ = 870 nm,
VR = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
VR = 10 V, λ = 870 nm
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
V(BR)
Iro
CD
CD
Vo
Ik
Ira
ϕ
λp
λ0.5
NEP
tr
tf
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
MIN.
60
43
TYP.
2
70
25
350
38
45
± 65
950
790 to 1050
4 x 10-14
100
100
MAX.
30
40
UNIT
V
nA
pF
pF
mV
µA
µA
deg
nm
nm
W/√Hz
ns
ns
1000
1.4
100
10
VR = 10 V
1
20
40
60
80
100
94 8403
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
20
40
60
80 100
94 8409
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81529
Rev. 1.6, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
407
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