NCS2003 데이터 시트보기 (PDF) - ON Semiconductor
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NCS2003 Datasheet PDF : 17 Pages
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +1.8 V
At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min Typ Max
Unit
INPUT CHARACTERISTICS
Input Offset Voltage
VOS
NCS2003A
NCx2003, NCx20032, NCx20034
0.5
3.0
mV
0.5
4.0
mV
5.0
mV
Offset Voltage Drift
DVOS/DT
NCS2003A (Note 8)
2.0
mV/°C
6.0
mV/°C
Input Bias Current
Input Offset Current
Channel Separation
IIB
IOS
XTLK
DC, NCx20032, NCx20034
1
pA
1
pA
100
dB
Input Resistance
RIN
1
TW
Input Capacitance
CIN
1.2
pF
Common Mode Rejection
CMRR
VIN = VSS to VDD – 0.6 V
70
80
dB
Ratio
VIN = VSS + 0.2 V to VDD – 0.6 V
65
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
AVOL
RL = 10 kW
80
92
dB
75
RL = 2 kW
92
70
Output Current Capability
ISC
(Note 8)
Sourcing
Sinking
5
8
mA
10
14
Output Voltage High
VOH
Output Voltage Low
VOL
RL = 10 kW
1.75 1.798
V
RL = 2 kW
1.7 1.78
RL = 10 kW
NCx2003, A
7
50
mV
NCx2003x
7
100
NOISE PERFORMANCE
RL = 2 kW
20
100
Voltage Noise Density
eN
Current Noise Density
iN
DYNAMIC PERORMANCE
f = 1 kHz
f = 1 kHz
20
nV/√Hz
0.1
pA√Hz
Gain Bandwidth Product
GBWP
5
MHz
Slew Rate at Unity Gain
SR
Rising Edge, RL = 2 kW, AV = +1
Falling Edge, RL = 2 kW, AV = +1
6
V/ms
9
Phase Margin
ym
RL = 10 kW, CL = 5 pF
53
°
Gain Margin
Am
RL = 10 kW, CL = 5 pF
NCx2003, A
12
dB
NCx2003x
8
Settling Time
tS
VO = 1 Vpp,
Settling time to
1.8
ms
Gain = 1, CL = 20 pF
0.1%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
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