APT8020LLL(2004) 데이터 시트보기 (PDF) - Advanced Power Technology
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APT8020LLL Datasheet PDF : 5 Pages
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DYNAMIC CHARACTERISTICS
APT8020B2LL_LLL
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 38A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 38A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 38A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 38A, RG = 5Ω
MIN
TYP
5200
1000
190
195
27
130
12
14
39
9
875
825
1450
985
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -38A)
t rr
Reverse Recovery Time (IS = -38A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -38A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
38
Amps
152
1.3 Volts
920
ns
20.7
µC
10 V/ns
MIN TYP MAX UNIT
0.18
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 4.16mH, RG = 25Ω, Peak IL = 38A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID38A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.16
0.7
0.12
0.08
0.04
0
10-5
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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