BUK9529-100B 데이터 시트보기 (PDF) - Philips Electronics
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BUK9529-100B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9629-100B
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM
peak drain current
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IDR
reverse drain current (DC)
IDRM
peak reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID = 46 A;
VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω;
starting Tmb = 25 °C
Min
Max Unit
-
100
V
-
100
V
-
±15
V
-
46
A
-
32
A
-
186
A
-
157
W
−55
+175 °C
−55
+175 °C
-
46
A
-
186
A
-
152
mJ
9397 750 11249
Product data
Rev. 01 — 18 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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