BUK9529-100B 데이터 시트보기 (PDF) - Philips Electronics
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BUK9529-100B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9629-100B
TrenchMOS™ logic level FET
150
Label is VGS (V)
ID
(A)
5
10
100
50
0
0
2
4
6
03nm51
4
3.8
3.6
3.4
3.2
3
2.8
2.6
8
10
VDS (V)
40
RDSon
(mΩ)
35
30
25
20
0
03nm50
5
10 VGS (V) 15
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nm52
60
2.5
RDSon
a
(mΩ)
3 3.2 3.4 3.6 3.8 4
5
2
50
03ng41
1.5
40
1
10
30
0.5
20
0
40
Tj = 25 °C
Label is VGS (V)
80 ID (A) 120
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11249
Product data
Rev. 01 — 18 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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