BUK9529-100B 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BUK9529-100B Datasheet PDF : 15 Pages
| |||
Philips Semiconductors
BUK95/9629-100B
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2.0
1.5
1.0
max
typ
min
03ng52
10-1
ID
(A)
10-2
-3
10
10-4
03ng53
min
typ
max
0.5
10-5
0.0
-60
0
60
120
180
Tj (ºC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
80
gfs
(S)
60
40
20
03nm48
6000
C
(pF)
4000
2000
Ciss
Coss
Crss
03nm53
0
0
25
50
75
100
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
0
10-2
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 11249
Product data
Rev. 01 — 18 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8 of 15
Share Link: 