BCW68G 데이터 시트보기 (PDF) - Fairchild Semiconductor

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BCW68G

PNP General-Purpose Amplifier

Fairchild Semiconductor 

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Total Device Dissipation

PD

Derate Above TA = 25°C

RθJA Thermal Resistance, Junction to Ambient

Note:

3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Max.

350

2.8

357

Unit

mW

mW/°C

°C/W

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

V(BR)CEO

V(BR)CES

V(BR)CBO

V(BR)EBO

ICES

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0

Collector-Emitter Breakdown Voltage IC = -10 μA

Collector-Base Breakdown Voltage IC = -100 μA, IE = 0

Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0

Collector Cut-Off Current

VCE = -45 V

VCE = -45V, TA = 150°C

Emitter Cut-Off Current

VEB = -4.0 V

IC = -10 mA, VCE = -1.0 V

DC Current Gain

IC = -100 mA, VCE = -1.0 V

IC = -300 mA, VCE = -1.0 V

Collector-Emitter Saturation Voltage IC = -300 mA, IB = -30 mA

Base-Emitter Saturation Voltage

IC = -500 mA, IB = -50 mA

Current Gain - Bandwidth Product

IC = -20 mA, VCE = -10 V,

f = 100 MHz

Cob

Output Capacitance

Cib

Input Capacitance

VCB = -10 V, IE = 0,

f = 1.0 MHz

VEB = -0.5 V, IC = 0,

f = 1.0 MHz

NF

Noise Figure

IC = -0.2 mA, VCE = -5.0 V,

RS = 1.0 kΩ, f = 1.0 kHz,

BW = 200 Hz

Min.

-45

-60

-60

-5.0

120

160

60

100

Max.

-20

-10

-20

Unit

V

V

V

V

nA

μA

nA

400

-1.5

V

-2.0

V

MHz

18

pF

105

pF

10

dB

© 1997 Fairchild Semiconductor Corporation

BCW68G Rev. 1.1.0

2

www.fairchildsemi.com

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