BCW68G 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BCW68G Datasheet PDF : 7 Pages
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Typical Performance Characteristics
500
400
125 °C
300
200
25 °C
VCE = 5V
100
- 40 °C
0
0.1 0.3
1
3
10 30 100 300
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
0.5
β = 10
0.4
0.3
25 °C
0.2
0.1
0
1
125 °C
- 40 °C
10
100
500
I C - COLLECTOR CURRE NT (mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
0.2
β = 10
0
1
10
100
500
I C- COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
100
V CB = 35V
10
1
0.1
0 .0 1
25
50
75
100
125
TA- AMBIE NT TEMP ERATURE (° C)
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
1
0.8
- 40 °C
0.6
25 °C
0.4
125 °C
0.2
VCE = 5V
0
0.1
1
10
25
I C - COLLECTOR CURRE NT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
20
16
12
C ib
8
4
C ob
0
0.1
1
10
50
REVERSE BIAS VOLTAGE (V)
Figure 6. Input and Output Capacitance vs.
Reverse Bias Voltage
© 1997 Fairchild Semiconductor Corporation
BCW68G Rev. 1.1.0
3
www.fairchildsemi.com
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