RMWB11001 데이터 시트보기 (PDF) - Raytheon Company
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RMWB11001 Datasheet PDF : 6 Pages
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RMWB11001
11 GHz Buffer Amplifier MMIC
Performance
Data
PRODUCT INFORMATION
RMWB11001, 11GHz Buffer Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq= 36mA
25
0
S21
20
-5
15
-10
S11
10
-15
S22
5
-20
0
9.5
-25
10
10.5
11
11.5
12
Frequency (GHz)
RMWB11001, 11GHz Buffer Amplifier, Typical Performance,
Vd=4V, Idq= 36mA, Chip Bonded into 50 ohm Test Fixture
30
10
20
S21
5
10
0
0
-10
S11
-20
S21
-5
S11
S22
-30
-10
S22
-40
-15
-50
-60
0
-20
5
10
15
20
25
30
35
40
Frequency (GHz)
RMWB11001, 11GHz Buffer Amplifier, Typical Performance,
Vd=4V, Idq= 36mA, Chip Bonded into 50 ohm Test Fixture
25
20
www.raytheon.com/micro
15
10
5
-16
-12
-8
Pout @ 10.5GHz
Gain @ 10.5GHz
Pout @ 11.1GHz
Gain @ 11.1GHz
Pout @ 11.7GHz
Gain @ 11.7GHz
-4
0
4
Input Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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