FQU18N20V2(2002) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQU18N20V2 Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
V
GS
15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.5
0.4
VGS = 10V
0.3
VGS = 20V
0.2
0.1
0.0
0
※ Note : T = 25℃
J
10
20
30
40
50
60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
150℃
25℃
100
-55℃
10-1
4
※ Notes :
1. V =40V
2. 25DS0μ s PulseTest
5
6
7
8
9
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
150℃ 25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 40V
DS
10
V = 100V
DS
V = 160V
DS
8
6
4
2
※ Note : ID = 18A
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B1, August 2002
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