IRFI540GPBF 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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IRFI540GPBF Datasheet PDF : 7 Pages
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IRFI540GPBF
N-Channel 100-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.034 at VGS = 10 V
ID (A)
50a
TO-220 FULLPAK
GDS
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• 100 % Rg Tested
APPLICATIONS
• Isolated DC/DC Converters
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
Single Pulse Avalanche Energyb
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °Cd
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
PCB Mount (TO-263)d
Symbol
RthJA
RthJC
E-mail：China@VBsemi TEL:86-755-83251052
Limit
100
± 20
50a
28a
120
31
61
360c
3.70
- 55 to 175
Limit
40
0.4
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1
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