IXFJ13N50 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFJ13N50 Datasheet PDF : 4 Pages
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IXFJ 13N50
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
7.5 9.0
S
2800
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
300
pF
70
pF
VGS = 10 V, VDS = 0.5 • VDSS,
ID = 0.5 • ID25, RG = 4.7 W (External)
18 30 ns
27 40 ns
76 100 ns
32 60 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
110 120 nC
15 25 nC
40 50 nC
0.7 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
TJ = 25°C
T=
J
125°C
QRM
IF = IS
-di/dt = 100 A/ms,
TJ = 25°C
VR = 100 V
TJ = 125°C
IRM
TJ = 25°C
TJ = 125°C
13 A
52 A
1.5 V
250 ns
350 ns
0.6
mC
1.25
mC
9
A
15
A
TO-268 Outline
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
Dim.
Inches
Millimeters
Min Max Min Max
A
.193 .201 4.90 5.10
A1 .106 .114 2.70 2.90
b
.045 .057 1.15 1.45
b2 .075 .083 1.90 2.10
C .016 .026 .040 .065
C2 .057 .063 1.45 1.60
D .543 .551 13.80 14.00
D1 .488 .500 12.40 12.70
E
.624 .632 15.85 16.05
E1 .524 .535 13.30 13.60
e
.215 BSC
5.45 BSC
H 1.365 1.395 34.67 35.43
L
.780 .800 19.81 20.32
L1 .079 .091 2.00 2.30
L2 .039 .045 1.00 1.15
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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