IXFK33N50 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFK33N50 Datasheet PDF : 2 Pages
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IXFK 33N50
IXFK 35N50
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
18 28
S
5200 5700 pF
640 750 pF
240 310 pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
35 45 ns
42 50 ns
110 140 ns
23 35 ns
227
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
29
nC
110
nC
0.3 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = 100 A, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
33 A
132 A
1.5 V
trr
250 ns
QRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
0.75
mC
IRM
7
A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c
0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J
0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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