QJD1210011(2005) 데이터 시트보기 (PDF) - Powerex

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QJD1210011
(Rev.:2005)

Split Dual SiC MOSFET Module 100 Amperes/1200 Volts

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

QJD1210011

Split Dual SiC MOSFET Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

Drain-Source Voltage (G-S Short)

Gate-Source Voltage

Drain Current (Continuous) at TC = 150°C

Drain Current (Pulsed)*

Maximum Power Dissipation (TC = 25°C, Tj < 175°C)

Junction Temperature

Storage Temperature

Mounting Torque, M6 Mounting Screws

VDSS

VGSS

ID

ID(pulse)

PD

Tj

Tstg

—

Module Weight (Typical)

—

V Isolation Voltage

VRMS

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

Preliminary

QJD1210011

1200

-5 / +25

100

250

900

-40 to 175

-40 to 150

40

140

3000

Units

Volts

Volts

Amperes

Amperes

Watts

°C

°C

in-lb

Grams

Volts

2

08/05 Rev. 3

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