RJP020N06FRA 데이터 시트보기 (PDF) - ROHM Semiconductor
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RJP020N06FRA Datasheet PDF : 14 Pages
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RJP020N06FRA
Nch 60V 2A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
60V
240mΩ
±2A
2W
lFeatures
1) Low on-resistance
2) Low voltage drive(2.5V drive)
3) AEC-Q101 Qualified
lOutline
SOT-89
MPT3
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
1000
Taping code
T100
Marking
LS
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60
V
Continuous drain current
ID
±2
A
Pulsed drain current
IDP*1
±8
A
Gate - Source voltage
VGSS
±12
V
Power dissipation
PD*2
2
W
PD*3
500
mW
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20160713 - Rev.001
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