RJP020N06FRA 데이터 시트보기 (PDF) - ROHM Semiconductor

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RJP020N06FRA

Nch 60V 2A Middle Power MOSFET

ROHM Semiconductor 

RJP020N06FRA

　　　　　　

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Ciss

Coss

Crss

td(on)*4

tr*4

td(off)*4

tf*4

VGS = 0V

VDS = 10V

f = 1MHz

VDD ⋍ 30V,VGS = 4V

ID = 1A

RL ⋍ 30Ω

RG = 10Ω

　　　　　　　　

Datasheet

Values

Unit

Min. Typ. Max.

- 160 -

-

50

-

pF

-

45

-

-

8

-

-

18

-

ns

-

40

-

-

20

-

lGate charge characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Total gate charge

Gate - Source charge

Gate - Drain charge

Qg*4

Qgs*4

Qgd*4

VDD ⋍ 30V,

ID = 2A,

VGS = 4V

Values

Unit

Min. Typ. Max.

-

5

10

-

1

-

nC

-

2.5

-

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Continuous forward current

Pulse forward current

Forward voltage

IS

ISP*1

VSD*4

Ta = 25℃

VGS = 0V, IS = 2A

-

-

2

A

-

-

8

A

-

-

1.2

V

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

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