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RMPA1751-102

3V PCS CDMA Power Amplifier Module

Raytheon Company 

RMPA1751-102

3V PCS CDMA Power

Amplifier Module

ADVANCED INFORMATION

Description

The RMPA1751-102 is a small-outline, power amplifier module (PAM) for Korean-band CDMA Personal

Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management

provides an effective means to reduce current consumption during peak phone usage at backed-off RF power

levels. Analog or digital bias control enables the handset designer to optimize gain, linearity and power-added

efficiency over a wide range of output powers, depending on the power-density profile of the wireless network.

High power-added efficiency and excellent linearity are achieved using Raytheon’s Heterojunction Bipolar

Transistor (HBT) process.

Features

K Advanced DC power-management extends average phone-battery life!

K Single positive-supply operation and power-down mode.

K 35% power-added efficiency at +29 dBm CDMA average output power.

K Compact LCC package: 6.0 x 6.0 x 1.5 mm3.

K 50 ohm matched and DC blocked input/output

Absolute

Maximum

Ratings1

Parameter

Supply Voltage

Reference Voltage

RF Input Power2

Load VSWR

Case Operating Temperature

Storage Temperature

Symbol Min

Vcc

Vref

1.5

Pin

VSWR

Tc

-40

Tstg

-55

Typical

3.5

2.7

+1

1.2:1

+25

+25

Max

6

4.0

+7

10:1

+110

+150

Units

V

V

dBm

°C

°C

Electrical Parameter

Characteristics3 Operating Frequency

Min Typ

1720

Max Unit

1780 MHz

Parameter

Stability (All spurious)5

Min Typ Max Unit

-70 dBc

Gain

Harmonics (Po ≤ 29 dBm)

(Po=0 dBm)

21

24

dB

2fo, 3fo, 4fo

-30

dBc

(Po=28 dBm)

25

27

dB

Quiescent Current

Linear Output Power

29

dBm

(Vref=2.7V)

60 80 100 mA

Power-Added Efficiency

(Po=16 dBm)

(Vref=2.0V)

6.0

%

(Vref=1.7V)

50

mA

35

mA

(Po=28 dBm)

27

30

%

Power Shutdown Current6

2

10 uA

(Po=29 dBm)

33

%

Vcc

3.0 3.5 4.5 V

ACPR (Offset ≥ 1.25 MHz)4

-49

-46 dBc Vref

1.7 2.7 3.2 V

Noise Figure

5

6 dB

Iref

13

mA

Noise Power (Po ≤ 29 dBm)

-135 dBm/Hz Case Operating

Input VSWR (50Ω)

2.0:1 2.5:1

Temperature

-30

+85 °C

Output VSWR (50Ω)

3.5:1

www.raytheon.com/micro

Notes:

1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

2. Typical RF input power for CDMA Pout=+28 dBm.

3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1750 MHz and load VSWR ≤ 1.2:1.

4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a

1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.

5. Load VSWR ≤ 6:1, all phase angles.

6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.

Characteristic performance data and specifications are subject to change without notice.

Revised August 27, 2001

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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