SFH6318T 데이터 시트보기 (PDF) - Infineon Technologies
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SFH6318T Datasheet PDF : 3 Pages
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SFH6318T
SFH6319T
Low Current, High Gain
Optocoupler
FEATURES
• Industry Standard SOIC-8 Surface Mountable
Package
• High Current Transfer Ratio, 800%
• Low Input Current, 0.5 mA
• High Output Current, 60 mA
• Isolation Test Voltage, 3000 VRMS
• TTL Compatible Output, VOL=0.1 V
• Adjustable Bandwidth—Access to Base
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option 1
APPLICATIONS
• Logic Ground Isolation—TTL/TTL, TTL/CMOS,
CMOS/CMOS, CMOS/TTL
• EIA RS 232C Line Receiver
• Low Input Current Line Receiver—Long Lines,
Party Lines
• Telephone Ring Detector
• 117 VAC Line Voltage Status Indication—Low
Input Power Dissipation
• Low Power Systems—Ground Isolation
DESCRIPTION
Very high current ratio together with 3000 VRMS isolation
are achieved by coupling an LED with an integrated
high gain photodetector in a SOIC-8 package. Separate
pins for the photodiode and output stage enable TTL
compatible saturation voltages with high speed opera-
tion. Photodarlington operation is achieved by tying the
VCC and VO terminals together. Access to the base ter-
minal allows adjustment to the gain bandwidth.
The SFH6318T is ideal for TTL applications since the
300% minimum current transfer ratio with an LED cur-
rent of 1.6 mA enables operation with one unit load-in
and one unit load-out with a 2.2 kΩ pull-up resistor.
The SFH6319T is best suited for low power logic appli-
cations involving CMOS and low power TTL. A 400%
current transfer ratio with only 0.5 mA of LED current is
guaranteed from 0°C to 70°C.
Caution:
Due to the small geometries of this device, it should be han-
dled with Electrostatic Discharge (ESD) precautions. Proper
grounding would prevent damage further and/or degrada-
tion which may be induced by ESD.
Package Dimensions in Inches (mm)
.120 ± .002
(3.05± .05)
NC 1
.240
(6.10)
CL
.154±.002
(.391±.05)
Anode
Cathode
2
3
Pin 1
.016
(.41)
.192 ±.005
(4.88 ±.13)
NC 4
.015±.002
40°
(.38±.05)
8 VCC
7 VB
6 V0
5 GND
7°
.058 ±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.021
(.53)
.008 (.20)
5° max.
.125 ±.005
(3.18 ± .13)
.050
(1.27)
typ.
.020±.004
(.51±.10)
2 plcs.
R.010
(.25)
max.
Lead
Coplanarity
±.0015 (.04)
max.
Tolerance: ±.005 (unless otherwise noted)
Maximum Ratings (TA=25°C)
Emitter
Reverse Input Voltage ...................................................................3.0 V
Supply and Output Voltage, VCC (pin 8-5), VO (pin 6-5)
SFH6318T ...................................................................... –0.5 to 7.0 V
SFH6319T ....................................................................... –0.5 to 18 V
Input Power Dissipation..............................................................35 mW
Derate Linearly above ...............................................................50°C
Free Air Temperature ........................................................0.7 mW/°C
Average Input Current ................................................................ 20 mA
Peak Input Current ..................................................................... 40 mA
(50% Duty Cycle-1.0 ms pulse width)
Peak Transient Input Current
(tp≤1.0 µs, 300 pps).................................................................. 1.0 A
Detector (Si Photodiode + Photodarlington)
Output Current IO (pin 6)............................................................ 60 mA
Emitter-base Reverse Voltage (pin 5-7).........................................0.5 V
Output Power Dissipation.........................................................150 mW
Derate Linearly from 25°C ................................................2.0 mW/°C
Package
Storage Temperature ..................................................–55°C to +125°C
Operating Temperature ................................................–40°C to +85°C
Lead Soldering Temperature (t=10 s) .........................................260°C
Junction Temperature..................................................................100°C
Ambient Temperature Range .....................................–55°C to +100°C
Isolation Test Voltage between
Emitter and Detector........................................................ 3000 VRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE 0110) ....................................................... 2
Creepage Distance ................................................................ ≥4.0 mm
Clearance ............................................................................... ≥4.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .............................................. 175
Isolation Resistance
VIO=500 V, TA=25°C RISOL................................................... ≥1012 Ω
VIO=500 V, TA=100°C RISOL................................................. ≥1011 Ω
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–282
March 11, 2000-20
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