STPS120L15TV
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode).
IM(A)
1000
900
800
700
600
500
400
300
200 IM
100
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Tc=50°C
Tc=75°C
Tc=110°C
1E+0
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
δ=0.5
0.5
δ=0.2
δ=0.1
0.2
Single pulse
0.1
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
tp
1E+0
1E+1
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values per diode).
IR(mA)
5E+3
1E+3
1E+2
Tj=100°C
Tj=70°C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values per diode).
C(nF)
20
10
F=1MHz
Tj=25°C
5
1E+1
Tj=25°C
2
VR(V)
1E+0
0.0
2.5
5.0
7.5 10.0 12.5 15.0
1
1
VR(V)
2
5
10
20
Fig. 7: Forward voltage drop versus forward
current (maximum values per diode).
IFM(A)
500
Tj=100°C
100
10
VFM(V)
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
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