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STP60N3LH5 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd

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STP60N3LH5
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
STP60N3LH5 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STP60N3LH5
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
www.VBsemi.tw
250
VGS = 10 V thru 6 V
200
VGS = 5 V
150
100
VGS = 4 V
50
0
0
VGS = 3 V
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
200
160
120
80
40
0
0
Axis Title
TC = -55 °C
TC = 25 °C
TC = 125 °C
10000
1000
100
10
20
30
40
ID - Drain Current (A)
2nd line
Transconductance
10
50
Axis Title
100
10000
80
1000
60
40
TC = 125 °C
20
TC = 25 °C
TC = -55 °C
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
Axis Title
0.010
0.008
VGS = 4.5 V
100
10
10
10000
1000
0.006
0.004
VGS = 10 V
100
0.002
0.000
0
20
40
60
80
ID - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current
2500
Axis Title
10000
2000
1500
Ciss
1000
1000
500
0
0
Crss
Coss
6
12
18
24
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
30
10
ID = 50 A
8
VDS = 20 V
Axis Title
6
4
2
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
50
E-mail:China@VBsemi TEL:86-755-83251052
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