STPS2L25AFN 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2L25AFN Datasheet PDF : 12 Pages
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STPS2L25
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5 square wave
SMB
SMA Flat Notch
TL = 125 °C
TL = 130 °C
IFSM Surge non repetitive forward current
SMB
tp = 10 ms sinusoidal
SMA Flat Notch
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value Unit
25
V
10
A
2
A
75
A
90
108
W
-65 to +150 °C
+150
°C
Symbol
Rth(j-l)
Parameter
Junction to lead
Table 2. Thermal resistance parameter
SMB
SMA Flat Notch
Max. value
25
20
Unit
°C/W
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1)
Reverse leakage current
VF(1)
Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 2 A
Tj = 25 °C
Tj = 125 °C
IF = 4 A
Min. Typ.
Max. Unit
-
90
µA
-
15
30
mA
-
0.450
-
0.325 0.375
V
-
0.530
-
0.430 0.510
To evaluate the conduction losses, use the following equation:
P = 0.24 x IF(AV) + 0.068 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS1245 - Rev 7
page 2/12
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