STPS6045C 데이터 시트보기 (PDF) - STMicroelectronics

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STPS6045C

Power Schottky Rectifier

STMicroelectronics 

STPS6045C

Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

IR(1)

Reverse leakage current Tj = 25 °C

Tj = 125 °C

VR = VRRM

VF(1)

Forward voltage drop

Tj = 125 °C

Tj = 25 °C

IF = 30 A

IF = 60 A

Tj = 125 °C

IF = 60 A

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P + 0.48 x IF(AV) + 0.005 IF²(RMS)

-

500

µA

-

20

80

mA

-

0.53 0.63

-

0.84

V

-

0.68 0.78

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average current versus ambient

temperature (δ = 0.5, per diode)

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Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating

versus pulse duration

versus junction temperature

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