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STTH3R02AFY 데이터 시트보기 (PDF) - STMicroelectronics

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STTH3R02AFY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH3R02AFY Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
STTH3R02-Y
Figure 5. Reverse recovery charges versus
dIF/dt (typical values)
455 Q& 
,  $
95) 9

7  ƒ&
M

Figure 6. Reverse recovery time versus dIF/dt
(typical values)
 W55 QV 

7  ƒ&
M
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7  ƒ&
M
GO)GW $—V






7  ƒ&
M

GO)GW $—V

Figure 7. Peak reverse recovery current versus
dIF/dt (typical values)
 ,50 $ 
,  $

95) 9

7  ƒ&
M






7  ƒ&
M
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Figure 8. Dynamic parameters versus junction
temperature
455,50>7M@455,50>7M ƒ&@

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 95) 9

,50

455



7M ƒ&







Figure 9. Junction capacitance versus reverse Figure 10. Thermal resistance junction to
voltage applied (typical values)
ambient versus copper surface under each lead
(typical values)
& S) 

) 0+]
926& P9506
7M ƒ&
5WK MD ƒ&: 
(SR[\SULQWHGERDUG)5FRSSHUWKLFNQHVV —P

62')ODW



95 9
6 FPð
&8





          
4/8
DocID027545 Rev 1

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