TLHE4900 데이터 시트보기 (PDF) - Vishay Semiconductors
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TLHE4900 Datasheet PDF : 6 Pages
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TLHE4900
Vishay Semiconductors
VISHAY
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Yellow
TLHE4900
Parameter
Test condition
Luminous intensity 1)
IF = 10 mA
Dominant wavelength
IF = 10 mA
Peak wavelength
IF = 10 mA
Angle of half intensity
IF = 10 mA
Forward voltage
IF = 20 mA
Reverse voltage
IR = 10 µA
Junction capacitance
VR = 0, f = 1 MHz
1) in one Packing Unit IVmin/IVmax ≤ 0.5
Symbol
Min
IV
66
λd
581
λp
ϕ
VF
VR
5
Cj
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
125
Typ.
Max
Unit
300
mcd
588
594
nm
590
nm
± 16
deg
1.9
2.6
V
V
15
pF
0° 10° 20°
30°
100
75
50
25
0
0
95 10887
20
40
60
80 100
Tamb - Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
95 10044
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
60
50
40
30
20
10
0
0
95 10894
20
40
60
80 100
Tamb - Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature for InGaN
100
10
1
1.0
1.5
2.0
2.5
3.0
95 10878
VF - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 83023
Rev. 1.5, 30-Aug-04
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