BAW56WGH 데이터 시트보기 (PDF) - ZOWIE Technology

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BAW56WGH

Silicon Switching Diode Array

ZOWIE Technology 

Zowie Technology Corporation

Silicon Switching Diode Array

Lead free product

Halogen-free type

BAW56WGH

3

1

2

ANODE

3

MAXIMUM RATINGS

Rating

Reverse Voltage

Forward Current

Forward Surge Current, t=1us

SOT-323

Symbol

VR

IF

IFM(surge)

THERMAL CHARACTERISTICS

Characteristic

Total Power Dissipation, Ts=103OC

Junction Temperature

Storage Temperature

Junction Soldering Point(1)

(1) For calculation of R JS Please refer to Application Thermal Resistance.

Symbol

Ptot

TJ

TSTG

R JS

Value

70

200

4.5

Max.

250

150

-65 to +150

≦190

CATHODE

1

2

CATHODE

Unit

Vdc

mAdc

Adc

Unit

mW

oC

oC

K/W

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min.

OFF CHARACTERISTICS

Reverse Breakdown Voltage

( I(BR) = 100uAdc )

V(BR)

70

Reverse Voltage Leakage Current

( VR=25Vdc, TJ=150oC )

( VR=70Vdc )

( VR=70Vdc, TJ=150oC )

Diode Capacitance

( VR=0, f = 1.0 MHZ )

Forward Voltage

( IF = 1.0 mAdc )

( IF = 10 mAdc )

( IF = 50 mAdc )

( IF = 150 mAdc )

IR

-

-

-

CD

-

-

VF

-

-

-

Reverse Recovery Time

( IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc ) ( Figure 1 ) RL = 100

trr

-

Max.

-

30

2.5

50

2.0

715

855

1000

1250

6.0

Unit

Vdc

uAdc

pF

mVdc

nS

REV. 0

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