LL46 데이터 시트보기 (PDF) - General Semiconductor

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LL46

Schottky Diodes

General Semiconductor 

LL46

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Reverse Breakdown Voltage

tested with 100 µA Pulses

V(BR)R

100

–

Forward Voltage

Pulse Test tp < 300 µs, δ < 2%

at IF = 0.1 mA

at IF = 10 mA

at IF = 250 mA

VF

–

–

VF

–

–

VF

–

–

Leakage Current

Pulse Test tp < 300 µs, δ < 2%

at VR = 1.5 V

at VR = 1.5 V, Tj = 60 °C

at VR = 10 V

at VR = 10 V, Tj = 60 °C

at VR = 50 V

at VR = 50 V, Tj = 60 °C

at VR = 75 V

at VR = 75 V, Tj = 60 °C

IR

–

–

IR

–

–

IR

–

–

IR

–

–

IR

–

–

IR

–

–

IR

–

–

IR

–

–

Capacitance

at VR = 0 V, f = 1 MHz

at VR = 1 V, f = 1 MHz

Ctot

–

10

Ctot

–

6

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1) Valid provided that electrodes are kept at ambient temperature.

Max.

Unit

–

V

0.25

0.45

1

0.5

5

0.8

7.5

2

15

5

20

–

–

0.31)

V

V

V

µA

µA

µA

µA

µA

µA

µA

µA

pF

pF

K/mW

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