72022 데이터 시트보기 (PDF) - Vishay Semiconductors

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72022

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Vishay Semiconductors 

Si4370DY

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

SCHOTTKY

Reverse Current vs. Junction Temperature

20

10

1

0.1

30 V

24 V

0.01

Forward Voltage Drop

10

TJ = 150_C

TJ = 25_C

0.001

0.0001

0

200

25

50

75

100 125 150

TJ − Temperature (_C)

Capacitance

1

0.0

0.3

0.6

0.9

1.2

1.5

VF − Forward Voltage Drop (V)

160

120

80

Coss

40

0

0

6

12

18

24

30

VDS − Drain-to-Source Voltage (V)

Document Number: 72022

S-32621—Rev. C, 29-Dec-03

www.vishay.com

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