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SZMMSZ5256ET1G 데이터 시트보기 (PDF) - ON Semiconductor

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SZMMSZ5256ET1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
SZMMSZ5256ET1G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 4 and 5)
Zener Impedance (Note 6)
Device*
Device
VZ (V)
@ IZT
ZZT @ IZT
Marking
Min
Nom
Max
mA
W
ZZK @ IZK
W
mA
MMSZ5253ET1G
CD6
23.75
25
26.25
5.0
35
600
0.25
MMSZ5254ET1G
CD7
25.65
27
28.35
4.6
41
600
0.25
MMSZ5255ET1G
CD8
26.60
28
29.40
4.5
44
600
0.25
MMSZ5256ET1G
CD9
28.50
30
31.50
4.2
49
600
0.25
MMSZ5257ET1G
CE1
31.35
33
34.65
3.8
58
700
0.25
MMSZ5258ET1G
CE2
34.20
36
37.80
3.4
70
700
0.25
MMSZ5259ET1G
MMSZ5262ET1G
CE3
37.05
39
40.95
3.2
CE6
48.45
51
53.55
2.5
80
800
0.25
125
1100
0.25
MMSZ5263ET1G
CE7
53.20
56
58.80
2.2
150
1300
0.25
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
Leakage Current
IR @ VR
mA
V
0.1
19
0.1
21
0.1
21
0.1
23
0.1
25
0.1
27
0.1
30
0.1
39
0.1
43
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