MPSA55RLRM 데이터 시트보기 (PDF) - ON Semiconductor
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MPSA55RLRM Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA05/D
Amplifier Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
MPSA05 MPSA06
Symbol MPSA55 MPSA56 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
60
80
60
80
4.0
500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
TJ, Tstg
– 55 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MPSA05, MPSA55
MPSA06, MPSA56
Emitter – Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA05, MPSA55
MPSA06, MPSA56
v v 1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
NPN
MPSA05
MPSA06*
PNP
MPSA55
MPSA56*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
60
80
V(BR)EBO
4.0
ICES
—
ICBO
—
—
Max
Unit
Vdc
—
—
—
Vdc
0.1
µAdc
µAdc
0.1
0.1
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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