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MPSA55RLRM 데이터 시트보기 (PDF) - ON Semiconductor

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MPSA55RLRM
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MPSA55RLRM Datasheet PDF : 6 Pages
1 2 3 4 5 6
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100
100
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.25
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(3)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
MPSA05
MPSA06
fT
MHz
100
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
MPSA55
MPSA56
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
50
5.0 ms
+10 V
0
tr = 3.0 ns
TURN–ON TIME
–1.0 V
VCC
+40 V
100
Vin
RB
5.0 mF
100
RL
OUTPUT
t * CS 6.0 pF
TURN–OFF TIME
+VBB
VCC
+40 V
100
5.0 ms
tr = 3.0 ns
Vin
RB
5.0 mF
100
RL
OUTPUT
t * CS 6.0 pF
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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