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VND5T035AK-E(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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VND5T035AK-E Datasheet PDF : 31 Pages
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VND5T035AK-E
Electrical specifications
2.3
Electrical characteristics
8 V < VCC < 36 V; -40 °C < Tj < 150 °C, unless otherwise specified.
Table 5. Power section
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VCC
Operating supply
voltage
8 24 36 V
VUSD
VUSDhyst
Undervoltage shutdown
Undervoltage shutdown
hysteresis
3.5 5
V
0.5
V
RON
On-state resistance(1)
IOUT = 3 A; Tj = 25°C
IOUT = 3 A; Tj = 150°C
35
mΩ
70
Vclamp Clamp voltage
IS = 20 mA
58 64 70 V
IS
Supply current
Off-state; VCC = 24 V; Tj = 25°C;
VIN = VOUT = VSENSE = 0 V
On-state; VCC = 24 V; VIN = 5 V;
IOUT = 0 A
2(2) 5(2) µA
4.2 6 mA
IL(off)
Off-state output current
VIN = VOUT = 0 V; VCC = 24 V;
Tj = 25°C
VIN = VOUT = 0 V; VCC = 24 V;
Tj = 125°C
0 0.01 3
µA
0
5
VF
Output - VCC diode
voltage
-IOUT = 3 A; Tj = 150°C
0.7 V
1. For each channel
2. PowerMOS leakage included
Table 6. Switching (VCC = 24 V; Tj = 25 °C)
Symbol
Parameter
Test conditions
td(on)
td(off)
dVOUT/dt(on)
dVOUT/dt(off)
WON
WOFF
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Switching energy losses
during twon
Switching energy losses
during twoff
RL = 8 Ω
RL = 8 Ω
RL = 8 Ω
RL = 8 Ω
RL = 8 Ω
RL = 8 Ω
Min. Typ. Max. Unit
46
54
0.55
0.46
µs
µs
V/µs
V/µs
1
mJ
0.65
mJ
Doc ID 018942 Rev. 4
9/31

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