BC847S(1998) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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BC847S Datasheet PDF : 8 Pages
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NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
45
V(BR)CES
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0
50
V(BR)CBO
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0
50
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150°C
ON CHARACTERISTICS
hFE
VCE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter ON Voltage
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
IC = 2.0 mA, VCE = 5.0 mA
IC = 10 mA, VCE = 5.0 mA
110
0.58
V
V
V
V
15
nA
5.0 µA
630
0.25 V
0.65 V
0.7
V
0.77 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
IC = 20 mA, VCE = 5.0,
f = 100 mHz
VCB = 10 V, f = 1.0 MHz
200
MHz
2.0
pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
1200
1000
125 °C
V CE = 5.0 V
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03 0.1 0.3 1 3 10 30 100
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 β = 10
0.2
0.15
0.1
0.05
25 °C
125 °C
- 40 °C
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
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