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FAN1100-F085 데이터 시트보기 (PDF) - ON Semiconductor

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FAN1100-F085
ON-Semiconductor
ON Semiconductor ON-Semiconductor
FAN1100-F085 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics
Symbol
Parameter
Conditions
Min. Typ. Max.
Unit
Power Supply Conditions Vbat = 6 to 28 V ; TJ= -40 °C to 150 °C (unless otherwise specified)
Vbat1
Operating voltage
Coil switching function
4
28
V
Vbat2
Operating voltage
All functions
6
28
V
Ibat
Supply current
TJ=150 °C, Vbat = 28 V,
RA open, Input = 5 V
5
mA
Vclamp Vbattery clamp
Ibatt = 10 mA
35
50
V
Sense Pin Conditions Vbat = 6 to 28 V ; TJ= -40 °C to 150 °C (unless otherwise specified)
Vlimit
Sense Voltage at current TJ = -40 °C to 150 °C
185
limit
(Vbat>8V)
215
mV
Vlimit
Sense Voltage at current TJ = -40 °C to 150 °C
170
mV
limit
(6V<Vbat<8V)
Tspike Input spike filter
Delay on rising and falling
13
µs
edge of Input
TD1
Turn on delay time
50% at the input to 10%
15
µs
change at the output
TD2
Turn off delay time
50% at the input to 10%
15
µs
change at the output
Input Control Conditions Vbat = 6 to 28 V ; TJ= -40 °C to + 150 °C (unless otherwise specified)
VINL
Input low voltage
1.2
1.7
V
VINH
Input high voltage
1.5
2
V
VINHys Input voltage hysteresis
0.25
0.6
V
IIN
Input current ( see fig 6)
0.5
15
mA
Gate Output Voltage Max Vbat = 6 to 28 V ; TJ= -40 °C to 150 °C (unless otherwise specified)
Vgmax Vgate max
16KΩ pulldown resistor
4.5 5.25
6
V
Vglow
Vgate low
(0mA<Igate<0.4mA @
0.0
T=25 °C)
0.2
V
Diagnostic Functions and Protection Vbat = 6 to 28 V ; TJ= -40 °C to 150 °C (unless otherwise specified)
RA
Resistor for input
reference current
5.2
200
CSSDMIN Minimum dwell time
capacitor
Note 1
10
nF
TDMAX Maximum dwell time
(CSSD=20 nF)
30
60
ms
ISLEW Soft-Shut-Down slew rate (Ic: 80-20%IClim)
0.7 1.5
2.5
A/ms
ICSSD1
CSSD Pin current for
TDMAX
0.8 1.25
1.5
µA
Note 1. Refer to section Maximum dwell time and soft-shutdown (SSD)
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