STW8Q14D-E4 데이터 시트보기 (PDF) - SEOUL SEMICONDUCTOR

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STW8Q14D-E4

Mid-Power LED

SEOUL SEMICONDUCTOR 

Performance Characteristics

Preliminary Product Data Sheet

STW8Q14D-E4 – Mid-Power LED

Table 3. Characteristics, IF=65mA, Tj= 25ºC, RH30%

Parameter

Forward Current

Luminous Intensity[1] (5,000K)[2]

Forward Voltage

CRI[3]

Viewing Angle

Thermal resistance (J to S) [4]

ESD Sensitivity(HBM)

Symbol

IF

Iv

VF

Ra

2Θ1/2

RθJ-S

-

Min.

-

-

2.65

80

-

-

Value

Typ.

Max.

65

-

11.85

-

2.7

-

-

-

120

-

9

-

Class 3A JEDEC JS-001-2017

Unit

mA

cd

V

Deg.

℃/W

Table 4. Absolute Maximum Ratings

Parameter

Forward Current

Power Dissipation

Junction Temperature

Operating Temperature

Storage Temperature

Symbol

IF

PD

Tj

Topr

Tstg

Value

200

0.6

125

-40 ~ + 85

-40 ~ + 100

Unit

mA

W

ºC

ºC

ºC

Notes :

(1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.

(2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.

Color coordinate : 0.005, CCT 5% tolerance.

(3) Tolerance is 2.0 on CRI measurements ,  0.1 on VF measurements.

(4) Thermal resistance is junction to Solder.

(5) IFP conditions with pulse width ≤10ms and duty cycle ≤10%

• Calculated performance values are for reference only.

• All measurements were made under the standardized environment of Seoul Semiconductor.

Rev 1.8, Jan 22, 2020

4

www.seoulsemicon.com

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