2SCR564F3TR 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SCR564F3TR

NPN 4A 80V Middle Power Transistor

ROHM Semiconductor 

2SCR564F3

NPN 4A 80V Middle Power Transistor

Parameter

Value

VCEO

80V

IC

4A

lOutline

　 DFN2020-3S

　

　

　

　

　

HUML2020L3

　

lFeatures

1) Suitable for Middle Power Driver.

2) Low VCE(sat)

　　VCE(sat)=300mV(Max.).

　　(IC/IB=2A/100mA)

3) High collector current.

　　IC=4A(max),ICP=8A(max)

4) Leadless small SMD package (HUML2020L3)

　　Excellent thermal and electrical conductivity.

lInner circuit

Datasheet

lApplication

LOW FREQUENCY AMPLIFIER

lPackaging specifications

Part No.

Package

Taping Reel size Tape width Quantity

code (mm) (mm) (pcs)

2SCR564F3

DFN2020-3S

(HUML2020L3)

TR

180

8

3000

Marking

NJ

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

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