CEM3317 데이터 시트보기 (PDF) - Unspecified
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CEM3317 Datasheet PDF : 6 Pages
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Description：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=-30V,ID=-5.1A,RDS(ON)<55mΩ@VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
CEM3317
S1
S
S
G
D
D
D
D
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-TC=25℃
Continuous Drain Current-TC=100℃
Pulsed Drain Current1
Power Dissipation4
Operating and Storage Junction Temperature Range
Ratings
-30
±20
-5.1
---
-20
2.5
-55 to +150
Thermal Characteristics：
Symbol
Parameter
Max
RƟJA
Thermal Resistance,Junction to Ambient2
50
Units
V
V
A
W
℃
Units
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