CEM7350L 데이터 시트보기 (PDF) - Unspecified

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CEM7350L

N-Channel and P-Channel MOSFET use advanced trench Technology

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CEM7350L

Description：

This N-Channel and P-Channel MOSFET use advanced trench

Technology To provide excellent RDS(ON)，low gate charge.

This device may be used to form a level shifted high side switch,

and for a host of other application.

Features：

S1

G1

S2

G2

D1

D1

D2

D2

N-Channel:VDS=100V,ID=2.2A,RDS(ON)<152mΩ@VGS=10V

P-Channel: VDS=-100V,ID=-1.8A,RDS(ON)<200mΩ@VGS=-10V

1) Low gate charge.

2) Green device available.

3) Advanced high cell denity trench technology for ultra Iow RDS(ON).

4) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

IDM

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current- TA=25℃

Continuous Drain Current-TA=70℃

Pulsed Drain Current1

Power Dissipation

Operating and Storage Junction Temperature Range

N-Channel P-Channel

100

-100

±20

±20

2.2

-1.8

1.7

-1.4

13.2

-7.2

1.5

2

-55 to +150

Units

V

V

A

A

W

℃

Thermal Characteristics：

Symbol

RƟJA

RƟJC

Parameter

Thermal Resistance,Junction to Ambient

Thermal Resistance Junction-Case

N-CH

85

25

P-CH

62.5

---

Units

℃/W

℃/W

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